Integrated Power Electronics Module
نویسنده
چکیده
From the history of power electronics, the technology improvements in power semiconductors have been the driving force for this problem. Moving from bipolar to MOSFET technology has greatly increased switching speed. For current semiconductor technology, very fast devices are available. For the power MOSFET used in front end application, they could be switched with mega hertz frequency range. The limiting factor now is the packaging technology. Because of the parasitic inductance and capacitance due to the packaging technology, the switching action has to be slowed down to limit the stress and undesirable noise problem. This limited the ability to reduce the switching loss of the devices.
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